Ion implanted tungsten wire

Tungsten has a high melting point, and at room temperature, corrosion resistance, usually used in the filament.

Tungsten ion implantation process

Tungsten ion implantation process is now an important part of semiconductor manufacturing, the use of high-energy charged ion beam injection form, doping atoms into the semiconductor, to achieve material performance optimization.

Ion implantation characteristics

• Can independently control ion distribution, good controllability, ion can be accurately injected, and can master
• the depth and concentration.
•  It can be hetero-doped
•  High concentration of doping is easy to obtain
• The injection temperature is low and the annealing temperature is not high, which can keep the thermal deformation of the product.

Annealing effect

High temperature heat energy can help amorphous ions to maintain single crystal structure and is widely used in post-implantation annealing.